Extension database XI: Electronics

Process nameCountryTypeData source

Alkaline cell - LR series (AA)
Alkaline Cell;
production mix, at plant;
LR Alkaline

GLOaggts

Alkaline cell - LR series (AAA)
Alkaline Cell;
production mix, at plant;
LR Alkaline

GLOaggts

Alkaline cell - LR series (C)
Alkaline Cell;
production mix, at plant;
LR Alkaline

GLOaggts

Alkaline cell - LR series (D)
Alkaline Cell;
production mix, at plant;
LR Alkaline

GLOaggts

Assembly line SMD (1SP, 2CS, 1CP, 1R, 1Rf) throughput 300/h
technology mix;
production mix, at plant;
SMD (1SP, 2CS, 1CP, 1R, 1Rf) throughput 300/h

GLOt-aggts

Assembly line SMD (1SP,1CS,1Rf) throughput 300/h
technology mix;
production mix, at plant;
SMD (1SP,1CS,1Rf) throughput 300/h

GLOt-aggts

Assembly line SMD (1SP,1CS,1Rf) throughput 600/h
technology mix;
production mix, at plant;
SMD (1SP,1CS,1Rf) throughput 600/h

GLOt-aggts

Assembly line SMD (1SP,2CS,1CP,1R,1Rf) throughput 600/h
technology mix;
production mix, at plant;
SMD (1SP,2CS,1CP,1R,1Rf) throughput 600/h

GLOt-aggts

Assembly line THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 300/h
technology mix;
production mix, at plant;
THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 300/h

GLOt-aggts

Assembly line THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 600/h
technology mix;
production mix, at plant;
THT/SMD (1TP,1SP,1CS,1WO,1Rf) throughput 600/h

GLOt-aggts

Cable 1-core power 18AWG PVC (16 g/m) D2.9
technology mix;
production mix, at plant;
tinned Cu wire, PVC insulation

GLOaggts

Cable 1-core signal 24AWG mPPE (3.0 g/m) D1.1
technology mix;
production mix, at plant;
tinned Cu wire, mPPE insulation

GLOaggts

Cable 1-core signal 24AWG PE (4.5 g/m) D1.4
technology mix;
production mix, at plant;
tinned Cu wire, PE insulation

GLOaggts

Cable 1-core signal 24AWG PTFE (3.0 g/m) D0.9
technology mix;
production mix, at plant;
tinned Cu wire, PTFE insulation

GLOaggts

Cable 1-core signal 24AWG PVC (4.5 g/m) D1.4
technology mix;
production mix, at plant;
tinned Cu wire, PVC insulation

GLOaggts

Cable 3-core mains power 10A/13A 16AWG mPPE (60 g/m) D6.3
technology mix;
production mix, at plant;
bare Cu wire, mPPE insulation, mPPE jacket, unshielded

GLOaggts

Cable 3-core mains power 10A/13A 16AWG PVC (100 g/m) D8
technology mix;
production mix, at plant;
bare Cu wire, PVC insulation, PVC jacket, unshielded

GLOaggts

Capacitor Al-capacitor axial THT (21g) D21x40
technology mix;
production mix, at plant;
(21g) D21x40

GLOaggts

Capacitor Al-capacitor axial THT (300mg) D3.3x11
technology mix;
production mix, at plant;
(300mg) D3.3x11

GLOaggts

Capacitor Al-capacitor axial THT (6g) D14x25
technology mix;
production mix, at plant;
(6g) D14x25

GLOaggts

Capacitor Al-capacitor radial THT (110mg) D3x5
technology mix;
production mix, at plant;
(110mg) D3x5

GLOaggts

Capacitor Al-capacitor radial THT (15.41g) D18x41
technology mix;
production mix, at plant;
(15.41g) D18x41

GLOaggts

Capacitor Al-capacitor radial THT (5.65g) D12.5x30
technology mix;
production mix, at plant;
(5.65g) D12.5x30

GLOaggts

Capacitor Al-capacitor SMD (1.29g) D10x10.2
technology mix;
production mix, at plant;
(1.29g) D10x10.2

GLOaggts

Capacitor Al-capacitor SMD (2.54g) D12.5x13.5
technology mix;
production mix, at plant;
(2.54g) D12.5x13.5

GLOaggts

Capacitor Al-capacitor SMD (300mg) D6.3x5.4
technology mix;
production mix, at plant;
(300mg) D6.3x5.4

GLOaggts

Capacitor Al-capacitor SMD (5.01g) D16x16.5
technology mix;
production mix, at plant;
(5.01g) D16x16.5

GLOaggts

Capacitor Al-capacitor SMD (7.89g) D18x21.5
technology mix;
production mix, at plant;
(7.89g) D18x21.5

GLOaggts

Capacitor Al-capacitor SMD (80mg) D3x5.4
technology mix;
production mix, at plant;
(80mg) D3x5.4

GLOaggts

Capacitor Aluminium screw terminal (220g) D 51.6 x 75 mm
technology mix;
production mix, at plant;
(220g) D 51.6 x 75 mm

GLOaggts

Capacitor Aluminium screw terminal (400g) D 64.3 x 96 mm
technology mix;
production mix, at plant;
(400g) D 64.3 x 96 mm

GLOaggts

Capacitor ceramic MLCC 01005 (0.054mg) D 0.4x0.2x0.22
technology mix;
production mix, at plant;
(0.054mg) D 0.4x0.2x0.22

GLOaggts

Capacitor ceramic MLCC 01005 (0.054mg) D 0.4x0.2x0.22 (Base Metals)
technology mix;
production mix, at plant;
(0.054mg) D 0.4x0.2x0.22 (Base Metals)

GLOaggts

Capacitor ceramic MLCC 0201 (0.17mg) D 0.6x0.3x0.3
technology mix;
production mix, at plant;
(0.17mg) D 0.6x0.3x0.3

GLOaggts

Capacitor ceramic MLCC 0201 (0.17mg) D 0.6x0.3x0.3 (Base Metals)
technology mix;
production mix, at plant;
(0.17mg) D 0.6x0.3x0.3 (Base Metals)

GLOaggts

Capacitor ceramic MLCC 0603 (6mg) D 1.6x0.8x0.8
technology mix;
production mix, at plant;
(6mg) D 1.6x0.8x0.8

GLOaggts

Capacitor ceramic MLCC 0603 (6mg) D 1.6x0.8x0.8 (Base Metals)
technology mix;
production mix, at plant;
(6mg) D 1.6x0.8x0.8 (Base Metals)

GLOaggts

Capacitor ceramic MLCC 1210 (50mg) D 3.2x1.6x1.6 (Base Metals)
technology mix;
production mix, at plant;
(50mg) D 3.2x1.6x1.6 (Base Metals)

GLOaggts

Capacitor ceramic MLCC 1210 (50mg) D 3.2x3.2x1.6
technology mix;
production mix, at plant;
(50mg) D 3.2x3.2x1.6

GLOaggts

Capacitor ceramic MLCC 2220 (450mg) D 5.7x5.0x2.5
technology mix;
production mix, at plant;
(450mg) D 5.7x5.0x2.5

GLOaggts

Capacitor ceramic MLCC 2220 (450mg) D 5.7x5.0x2.5 (Base Metals)
technology mix;
production mix, at plant;
(450mg) D 5.7x5.0x2.5 (Base Metals)

GLOaggts

Capacitor film-capacitor boxed RM15 (3.2g) 17.7x10x16.5
technology mix;
production mix, at plant;
(3.2g) 17.7x10x16.5

GLOaggts

Capacitor film-capacitor boxed RM27.5 (20.4g) 31x21x31
technology mix;
production mix, at plant;
(20.4g) 31x21x31

GLOaggts

Capacitor film-capacitor boxed RM5 (600mg) 7.2x6x11
technology mix;
production mix, at plant;
(600mg) 7.2x6x11

GLOaggts

Capacitor film-capacitor unboxed RM15 (2.6g) 15x7x12
technology mix;
production mix, at plant;
(2.6g) 15x7x12

GLOaggts

Capacitor film-capacitor unboxed RM27.5 (11g) 27.5x11x17.5
technology mix;
production mix, at plant;
(11g) 27.5x11x17.5

GLOaggts

Capacitor film-capacitor unboxed RM7.5 (150mg) 7.5x1.5x6.0
technology mix;
production mix, at plant;
(150mg) 7.5x1.5x6.0

GLOaggts

Capacitor tantal SMD E (500mg) 7.3x4.3x4.1
technology mix;
production mix, at plant;
(500mg) 7.3x4.3x4.1

GLOaggts

Capacitor tantal SMD Y (25mg) 3.2x1.6x1.6
technology mix;
production mix, at plant;
(25mg) 3.2x1.6x1.6

GLOaggts

Capacitor tantal SMD Z (8mg) 2x1.25x1.2
technology mix;
production mix, at plant;
(8mg) 2x1.25x1.2

GLOaggts

Coil miniature wound SDR0302 (81mg) D3x2.5
technology mix;
production mix, at plant;
SDR0302 (81mg) D3x2.5

GLOaggts

Coil miniature wound SDR1006 (1.16g) D9.8x5.8
technology mix;
production mix, at plant;
SDR1006 (1.16g) D9.8x5.8

GLOaggts

Coil miniature wound SRP1040 (2.652g) D11.8x4.2
technology mix;
production mix, at plant;
SRP1040 (2.652g) D11.8x4.2

GLOaggts

Coil miniature wound SRR0804 (580mg) D10.5x3.8
technology mix;
production mix, at plant;
SRR0804 (580mg) D10.5x3.8

GLOaggts

Coil miniature wound SRR1806 (3.12g) D18.3x6.8
technology mix;
production mix, at plant;
SRR1806 (3.12g) D18.3x6.8

GLOaggts

Coil multilayer chip 0402 (1mg) 1x0.5x0.5
technology mix;
production mix, at plant;
0402 (1mg) 1x0.5x0.5

GLOaggts

Coil multilayer chip 1812 (108mg) 4.5x3.2x1.5
technology mix;
production mix, at plant;
(108mg) 4.5x3.2x1.5

GLOaggts

Coil quad-chokes (2.5g) 14.5x13.3x8.0
technology mix;
production mix, at plant;
(2.5g) 14.5x13.3x8.0

GLOaggts

Coin cell (Li/Poly-carbonmonofluoride - RB0.8; RS0.65)
Coin cell;
production mix, at plant;
BR1632A

GLOaggts

Components mixer

GLOe-epts

Connector Schuko CEE 7/16 (15 g, 2 pins)
technology mix;
production mix, at producer

GLOaggts

Diode MELF (130mg) D2.6x5.2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
MELF (130mg) D2.6x5.2

GLOaggts

Diode mMELF (40mg) D1.6x3.8
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
mMELF (40mg) D1.6x3.8

GLOaggts

Diode power DO214/219 (93mg) 4.3x3.6x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
DO214/219 (93mg) 4.3x3.6x2.3

GLOaggts

Diode power THT DO201 (1.12g) D5.3x9.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
THT DO201 (1.12g) D5.3x9.5

GLOaggts

Diode power THT DO35 (150mg) D1.76x3.77
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
THT DO35 (150mg) D1.76x3.77

GLOaggts

Diode signal DO214/219 (14.8mg) 3.9x1.9x1
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
DO214/219 (14.8mg) 3.9x1.9x1

GLOaggts

Diode signal SOD123/323/523 (1.59mg) 0.8x0.75x1.6 with Au-Bondwire
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
SOD123/323/523 (1.59mg) 0.8x0.75x1.6 with Au-Bondwire

GLOaggts

Diode signal SOD123/323/523 (9.26mg) 2.4x1.6x1 with Au-Bondwire
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
SOD123/323/523 (9.26mg) 2.4x1.6x1 with Au-Bondwire

GLOaggts

EMS Shielding
technology mix;
production mix, at plant;
EMS

GLOaggts

Filter SAW (25mg) 3x7x1
technology mix;
production mix, at plant;
(25mg) 3x7x1

GLOaggts

IC BGA 144 (466mg) 13x13x1.75
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(466mg) 13x13x1.75

GLOaggts

IC BGA 256 (2.62g) 27x27x2.36 CMOS logic (90 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(2.62g) 27x27x2.36 CMOS logic (90 nm node)

GLOaggts

IC BGA 48 (70mg) 6x6x1.1mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(70mg) 6x6x1.1mm MPU generic (130 nm node)

GLOaggts

IC BGA 672 (4.92g) 35x35x2.36 CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip;
production mix, at plant;
14 nm CMOS process flow: Bulk silicon FinFET, self-aligned double patterning (SADP), hi-k dual metal replaced metal gate (RMG), epitaxial SiGe source and drain, strain engineering, litho-etch-litho-etch (LELE) double patterning for M1, 13 layer copper interconnect

GLOaggts

IC BGA 672 (4.92g) 35x35x2.36 CMOS logic (65 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(4.92g) 35x35x2.36 CMOS logic (65 nm node)

GLOaggts

IC DIP 24 (2.59g) 35.5x8.2x3.8
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(2.59g) 35.5x8.2x3.8

GLOaggts

IC DIP 42 (6.30g) 54.6x14.1x3.9
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(6.30g) 54.6x14.1x3.9

GLOaggts

IC DIP 8 (480mg) 10.9x6.6x3.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(480mg) 10.9x6.6x3.3

GLOaggts

IC LGA 1366 (~5g) 45x42.5x~2.5 CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip;
production mix, at plant;
14 nm CMOS process flow: Bulk silicon FinFET, self-aligned double patterning (SADP), hi-k dual metal replaced metal gate (RMG), epitaxial SiGe source and drain, strain engineering, litho-etch-litho-etch (LELE) double patterning for M1, 13 layer copper interconnect

GLOaggts

IC LGA 1366 (~5g) 45x42.5x~2.5 CMOS logic (32 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(~5g) 45x42.5x~2.5 CMOS logic (32 nm node)

GLOaggts

IC PLCC 20 (700mg) 8.9x8.9x3.8
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(700mg) 8.9x8.9x3.8

GLOaggts

IC PLCC 44 (2.30g) 16.6x16.6x3.8
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(2.30g) 16.6x16.6x3.8

GLOaggts

IC PLCC 68 (4.60g) 24.2x24.2x3.9
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(4.60g) 24.2x24.2x3.9

GLOaggts

IC QFP 240 (6.20g) 32x32x3.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(6.20g) 32x32x3.5

GLOaggts

IC QFP 32 (180mg) 7x7x1.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(180mg) 7x7x1.5

GLOaggts

IC QFP 80 (1.60g) 14x20x2.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(1.60g) 14x20x2.7

GLOaggts

IC SO 20 (500mg) 12.8x7.5x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(500mg) 12.8x7.5x2.3

GLOaggts

IC SO 44 (910mg) 28.3x13.3x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(910mg) 28.3x13.3x2.3

GLOaggts

IC SO 8 (80mg) 4.9x3.9x1.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(80mg) 4.9x3.9x1.7

GLOaggts

IC SSOP 14 (120mg) 6.0x5.3x1.75
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(120mg) 6.0x5.3x1.75

GLOaggts

IC SSOP 24 (210mg) 8.2x5.3x1.75
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(210mg) 8.2x5.3x1.75

GLOaggts

IC SSOP 64 (340mg) 26x10.2x1.75
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(340mg) 26x10.2x1.75

GLOaggts

IC TQFP 100 (520mg) 14x14x1.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(520mg) 14x14x1.0

GLOaggts

IC TQFP 32 (70mg) 5x5x1.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
IC TQFP 32 (70mg) 5x5x1.0

GLOaggts

IC TQFP 44 (260mg) 10x10x1.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(260mg) 10x10x1.0

GLOaggts

IC TSOP 28 (215mg) 8x13.4x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(215mg) 8x13.4x1.2 DRAM

GLOaggts

IC TSOP 28 (215mg) 8x13.4x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(215mg) 8x13.4x1.2 flash

GLOaggts

IC TSOP 32 (325mg) 8x20x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(325mg) 8x20x1.2 DRAM

GLOaggts

IC TSOP 32 (325mg) 8x20x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(325mg) 8x20x1.2 flash

GLOaggts

IC TSOP 56 (590mg) 14x20x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(590mg) 14x20x1.2 DRAM

GLOaggts

IC TSOP 56 (590mg) 14x20x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(590mg) 14x20x1.2 flash

GLOaggts

IC TSSOP 16 (65mg) 4.4x5.0x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(65mg) 4.4x5.0x1.2 DRAM

GLOaggts

IC TSSOP 16 (65mg) 4.4x5.0x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(65mg) 4.4x5.0x1.2 flash

GLOaggts

IC TSSOP 48 (102mg) 6.1x12.5x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(102mg) 6.1x12.5x1.2 DRAM

GLOaggts

IC TSSOP 48 (102mg) 6.1x12.5x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(102mg) 6.1x12.5x1.2 flash

GLOaggts

IC TSSOP 8 (28mg) 3.0x2.9x1.2 DRAM
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(28mg) 3.0x2.9x1.2 DRAM

GLOaggts

IC TSSOP 8 (28mg) 3.0x2.9x1.2 flash
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(28mg) 3.0x2.9x1.2 flash

GLOaggts

IC WLP CSP 196 (400mg) 12x12x1.41mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip;
production mix, at plant;
14 nm CMOS process flow: Bulk silicon FinFET, self-aligned double patterning (SADP), hi-k dual metal replaced metal gate (RMG), epitaxial SiGe source and drain, strain engineering, litho-etch-litho-etch (LELE) double patterning for M1, 13 layer copper interconnect

GLOaggts

IC WLP CSP 196 (400mg) 12x12x1.41mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(400mg) 12x12x1.41mm CMOS logic (22 nm node)

GLOaggts

IC WLP CSP 196 (400mg) 12x12x1.41mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(400mg) 12x12x1.41mm DRAM (57 nm node)

GLOaggts

IC WLP CSP 196 (400mg) 12x12x1.41mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(400mg) 12x12x1.41mm flash (45 nm node)

GLOaggts

IC WLP CSP 196 (400mg) 12x12x1.41mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(400mg) 12x12x1.41mm MPU generic (130 nm node)

GLOaggts

IC WLP CSP 425 (736mg) 19x19x1.5mm CMOS logic (14 nm node)
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip;
production mix, at plant;
14 nm CMOS process flow: Bulk silicon FinFET, self-aligned double patterning (SADP), hi-k dual metal replaced metal gate (RMG), epitaxial SiGe source and drain, strain engineering, litho-etch-litho-etch (LELE) double patterning for M1, 13 layer copper interconnect

GLOaggts

IC WLP CSP 425 (736mg) 19x19x1.5mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(736mg) 19x19x1.5mm CMOS logic (22 nm node)

GLOaggts

IC WLP CSP 425 (736mg) 19x19x1.5mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(736mg) 19x19x1.5mm DRAM (57 nm node)

GLOaggts

IC WLP CSP 425 (736mg) 19x19x1.5mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(736mg) 19x19x1.5mm flash (45 nm node)

GLOaggts

IC WLP CSP 425 (736mg) 19x19x1.5mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(736mg) 19x19x1.5mm MPU generic (130 nm node)

GLOaggts

IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm CMOS logic (14 nm node) [agg]
front-end and back-end processing of the wafer, including the Czochralski method of silicon production, and packaging of the chip;
production mix, at plant;
14 nm CMOS process flow: Bulk silicon FinFET, self-aligned double patterning (SADP), hi-k dual metal replaced metal gate (RMG), epitaxial SiGe source and drain, strain engineering, litho-etch-litho-etch (LELE) double patterning for M1, 13 layer copper interconnect

GLOaggts

IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm CMOS logic (22 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(10.2mg) 3.17x3.17x0.55mm CMOS logic (22 nm node)

GLOaggts

IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm DRAM (57 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(10.2mg) 3.17x3.17x0.55mm DRAM (57 nm node)

GLOaggts

IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm flash (45 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(10.2mg) 3.17x3.17x0.55mm flash (45 nm node)

GLOaggts

IC WLP CSP 49 (10.2mg) 3.17x3.17x0.55mm MPU generic (130 nm node)
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(10.2mg) 3.17x3.17x0.55mm MPU generic (130 nm node)

GLOaggts

Key switch Dip (79mg) 11.39x4.5x1.5
technology mix;
production mix, at plant;
(79mg) 11.39x4.5x1.5

GLOaggts

Key switch tact (242mg) 6.2x6.3x1.8
technology mix;
production mix, at plant;
(242mg) 6.2x6.3x1.8

GLOaggts

LED SMD high-efficiency with lens max 0.5A (235mg) Au bondwire 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 0.5A (235mg) Au bondwire 9.0x7.0x4.4

GLOaggts

LED SMD high-efficiency with lens max 0.5A (235mg) Flip Chip 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 0.5A (235mg) Flip Chip 9.0x7.0x4.4

GLOaggts

LED SMD high-efficiency with lens max 0.5A (59mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 0.5A (59mg) Au bondwire 3.5x3.5x2.0

GLOaggts

LED SMD high-efficiency with lens max 0.5A (59mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 0.5A (59mg) Flip Chip 3.5x3.5x2.0

GLOaggts

LED SMD high-efficiency with lens max 1.5A (61mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1.5A (61mg) Au bondwire 3.5x3.5x2.0

GLOaggts

LED SMD high-efficiency with lens max 1.5A (61mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1.5A (61mg) Flip Chip 3.5x3.5x2.0

GLOaggts

LED SMD high-efficiency with lens max 1A (235mg) Au bondwire 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1A (235mg) Au bondwire 9.0x7.0x4.4

GLOaggts

LED SMD high-efficiency with lens max 1A (235mg) Flip Chip 9.0x7.0x4.4
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1A (235mg) Flip Chip 9.0x7.0x4.4

GLOaggts

LED SMD high-efficiency with lens max 1A (60mg) Au bondwire 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1A (60mg) Au bondwire 3.5x3.5x2.0

GLOaggts

LED SMD high-efficiency with lens max 1A (60mg) Flip Chip 3.5x3.5x2.0
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
high-efficiency with lens max 1A (60mg) Flip Chip 3.5x3.5x2.0

GLOaggts

LED SMD low-efficiency max 50mA (35mg) without Au 3.2x2.8x1.9
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
max 50mA (35mg) without Au 3.2x2.8x1.9

GLOaggts

LED THT 5mm (350mg) D5x7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
5mm (350mg) D5x7

GLOaggts

Micro Speaker (2g, dynamic, Nd magnet, SMD)
technology mix;
production mix, at plant;
Dynamic, Nd Magnet, SMD (2g)

GLOaggts

Microphone (0.05g, electret condenser, SMD)
technology mix;
production mix, at plant;
0.05g, electret condenser, SMD

GLOaggts

Oscillator crystal (500mg) 11.05x4.65x2.5
technology mix;
production mix, at plant;
(500mg) 11.05x4.65x2.5

GLOaggts

Oscillator crystal (750mg) 11.35x4.65x3.6
technology mix;
production mix, at plant;
(750mg) 11.35x4.65x3.6

GLOaggts

Printed Wiring Board 10-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
10-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 10-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
10-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 10-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
10-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 12-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
12-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 12-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
12-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 12-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
12-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 16-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
16-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 16-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
16-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 16-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
16-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 1-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
1-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 1-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
1-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 1-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
1-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 2-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
2-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 2-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
2-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 2-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
2-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 4-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
4-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 4-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
4-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 4-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
4-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Printed Wiring Board 8-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
8-layer rigid FR4 with chem-elec AuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 8-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
8-layer rigid FR4 with chemSn elecAuNi finish (Subtractive method)

GLOaggts

Printed Wiring Board 8-layer rigid FR4 with HASL finish (Subtractive method)
via the subtractive method (as opposed to additive method);
production mix, at plant;
8-layer rigid FR4 with HASL finish (Subtractive method)

GLOaggts

Resistor flat chip 0402 (0.6mg)
technology mix;
production mix, at plant;
0402 (0.6mg)

GLOaggts

Resistor flat chip 0603 (1.9mg)
technology mix;
production mix, at plant;
0603 (1.9mg)

GLOaggts

Resistor flat chip 1206 (9.2mg)
technology mix;
production mix, at plant;
1206 (9.2mg)

GLOaggts

Resistor MELF MMA 0204 (19mg) D1.4x3.6
technology mix;
production mix, at plant;
0204 (19mg) D1.4x3.6

GLOaggts

Resistor MELF MMB 0207 (79mg) D2.2x5.8
technology mix;
production mix, at plant;
0207 (79mg) D2.2x5.8

GLOaggts

Resistor MELF MMU 0102 (7mg) D1.1x2.2
technology mix;
production mix, at plant;
0102 (7mg) D1.1x2.2

GLOaggts

Resistor thick film flat chip 01005 (0.04mg)
technology mix;
production mix, at plant;
(0.04mg)

GLOaggts

Resistor thick film flat chip 0201 (0.15mg)
technology mix;
production mix, at plant;
(0.15mg)

GLOaggts

Resistor thick film flat chip 0402 (0.75mg)
technology mix;
production mix, at plant;
0402 (0.75mg)

GLOaggts

Resistor thick film flat chip 0603 (2.1mg)
technology mix;
production mix, at plant;
0603 (2.1mg)

GLOaggts

Resistor thick film flat chip 1206 (8.9mg)
technology mix;
production mix, at plant;
1206 (8.9mg)

GLOaggts

Resistor THT MBA 0204 (125mg) D1.6x3.6
technology mix;
production mix, at plant;
0204 (125mg) D1.6x3.6

GLOaggts

Resistor THT MBB 0207 (220mg) D2.5x6.3
technology mix;
production mix, at plant;
0207 (220mg) D2.5x6.3

GLOaggts

Resistor THT MBE 0414 (700mg) D4.0x11.9
technology mix;
production mix, at plant;
0414 (700mg) D4.0x11.9

GLOaggts

Ring Core Coil 30g (With housing)
technology mix;
production mix, at plant;
30g (With housing)

GLOaggts

Ring Core Coil 30g (Without housing)
technology mix;
production mix, at plant;
30g (Without housing)

GLOaggts

Ring Core Coil 8 g (Without housing)
technology mix;
production mix, at plant;
8g (Without housing)

GLOaggts

Ring Core Coil 80g (With housing)
technology mix;
production mix, at plant;
80g (With housing)

GLOaggts

Ring Core Coil 80g (Without housing)
technology mix;
production mix, at plant;
80g (Without housing)

GLOaggts

Ring Core Coil 8g (With housing)
technology mix;
production mix, at plant;
8g (With housing)

GLOaggts

Solder paste AuIn18
technology mix;
production mix, at plant;
AuIn18

GLOaggts

Solder paste AuSn20
technology mix;
production mix, at plant;
AuSn20

GLOaggts

Solder paste InPb40
technology mix;
production mix, at plant;
InPb40

GLOaggts

Solder paste InSn48
technology mix;
production mix, at plant;
InSn48

GLOaggts

Solder paste SnAg2.6Cu0.3
technology mix;
production mix, at plant;
SnAg2.6Cu0.3

GLOaggts

Solder paste SnAg3.5
technology mix;
production mix, at plant;
SnAg3.5

GLOaggts

Solder paste SnAg3.5Cu0.7 (SAC-Lot)
technology mix;
production mix, at plant;
SnAg3.5Cu0.7 (SAC-Lot)

GLOaggts

Solder paste SnAg3Cu0.5 (SAC-Lot)
technology mix;
production mix, at plant;
SnAg3Cu0.5 (SAC-Lot)

GLOaggts

Solder paste SnAg4Cu0.6
technology mix;
production mix, at plant;
SnAg4Cu0.6

GLOaggts

Solder paste SnCu0.7
technology mix;
production mix, at plant;
SnCu0.7

GLOaggts

Solder paste SnCu0.7Ag0.3
technology mix;
production mix, at plant;
SnCu0.7Ag0.3

GLOaggts

Solder paste SnCu0.7Ni0.05
technology mix;
production mix, at plant;
SnCu0.7Ni0.05

GLOaggts

Solder paste SnIn10Ag3.1
technology mix;
production mix, at plant;
SnIn10Ag3.1

GLOaggts

Solder paste SnPb34Ag2
technology mix;
production mix, at plant;
SnPb34Ag2

GLOaggts

Solder paste SnPb36
technology mix;
production mix, at plant;
SnPb36

GLOaggts

Solder paste SnZn9
technology mix;
production mix, at plant;
SnZn9

GLOaggts

Thermistor SMD NTC 0402 (ca. 4mg)
technology mix;
production mix, at plant;
NTC 0402 (ca. 4mg)

GLOaggts

Thermistor SMD NTC 0603 (6mg)
technology mix;
production mix, at plant;
NTC 0603 (6mg)

GLOaggts

Thermistor SMD NTC 0805 (13mg)
technology mix;
production mix, at plant;
NTC 0805 (13mg)

GLOaggts

Thermistor SMD NTC 1206 (18mg)
technology mix;
production mix, at plant;
NTC 1206 (18mg)

GLOaggts

Thermistor SMD PTC (400mg) 6.3x8x3.3
technology mix;
production mix, at plant;
PTC (400mg) 6.3x8x3.3

GLOaggts

Thermistor THT NTC, Leaded Disk (120mg) D2.5x43
technology mix;
production mix, at plant;
Leaded Disk (120mg) D2.5x43

GLOaggts

Thermistor THT NTC, Leaded Disk (250mg) D4.5x41
technology mix;
production mix, at plant;
Leaded Disk (250mg) D4.5x41

GLOaggts

Thermistor THT PTC Overcurrent Protection, Leaded Disk (980mg) D12x35
technology mix;
production mix, at plant;
Leaded Disk (980mg) D12x35

GLOaggts

Thermistor THT PTC Switch, Leaded Disk (420mg) D6x13
technology mix;
production mix, at plant;
Leaded Disk (420mg) D6x13

GLOaggts

Thermistor THT PTC Temp Sensor, Leaded Disk (250mg) D4x42 PE
technology mix;
production mix, at plant;
Leaded Disk (250mg) D4x42 PE

GLOaggts

Transistor D2PAK TO263 (1.38g) 10.3x9.6x4.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(1.38g) 10.3x9.6x4.5

GLOaggts

Transistor DPAK TO252 (290mg) 6.6x6.2x2.2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(290mg) 6.6x6.2x2.2

GLOaggts

Transistor power THT/SMD SOT93/TO218 3 leads (4.70g) 15.5x12.9x4.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(4.70g) 15.5x12.9x4.7

GLOaggts

Transistor power THT/SMD SOT93/TO218 7 leads (4.80g) 15.5x12.9x4.7
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(4.80g) 15.5x12.9x4.7

GLOaggts

Transistor signal SOT223 3 leads (110mg) 3.8x7.65x2.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(110mg) 3.8x7.65x2.3

GLOaggts

Transistor signal SOT223 8 leads (180mg) 3.8x7.65x3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(180mg) 3.8x7.65x3

GLOaggts

Transistor signal SOT23 3 leads (10mg) 1.4x3x1
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(10mg) 1.4x3x1

GLOaggts

Transistor signal SOT23 8 leads (18mg) 1.4x3x2
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(18mg) 1.4x3x2

GLOaggts

Transistor THT SOT82 (720mg) 10.6x7.6x2.5
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(720mg) 10.6x7.6x2.5

GLOaggts

Transistor THT TO92 (250mg) D4.8x5.3
front-end and back-end processing of the wafer, including Czochralski method of silicon growing;
production mix, at plant;
(250mg) D4.8x5.3

GLOaggts

Varistor THT VDR, Leaded Disk (2g) D12x25
technology mix;
production mix, at plant;
Leaded Disk (2g) D12x25

GLOaggts

Plans

GLO: Populated printed wiring board (parameterized)